Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF3704
RFQ
VIEW
RFQ
2,134
In-stock
Infineon Technologies MOSFET N-CH 20V 77A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 87W (Tc) N-Channel - 20V 77A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 19nC @ 4.5V 1996pF @ 10V 4.5V, 10V ±20V
IRF3704PBF
RFQ
VIEW
RFQ
3,274
In-stock
Infineon Technologies MOSFET N-CH 20V 77A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 87W (Tc) N-Channel - 20V 77A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 19nC @ 4.5V 1996pF @ 10V 4.5V, 10V ±20V
IRF3709
RFQ
VIEW
RFQ
3,496
In-stock
Infineon Technologies MOSFET N-CH 30V 90A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V
IRF3709PBF
RFQ
VIEW
RFQ
3,932
In-stock
Infineon Technologies MOSFET N-CH 30V 90A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V