Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 30V 62A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 87W (Tc) N-Channel - 30V 62A (Tc) 12.5 mOhm @ 15A, 10V 3V @ 250µA 19nC @ 4.5V 1990pF @ 15V 4.5V, 10V ±20V
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Sanken MOSFET N-CH 75V 62A TO-220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 116W (Tc) N-Channel - 75V 62A (Tc) 9.3 mOhm @ 31.2A, 10V 2.5V @ 1mA 57nC @ 10V 4040pF @ 25V 4.5V, 10V ±20V
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Infineon Technologies MOSFET N-CH 30V 62A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 87W (Tc) N-Channel - 30V 62A (Tc) 12.5 mOhm @ 15A, 10V 3V @ 250µA 19nC @ 4.5V 1990pF @ 15V 4.5V, 10V ±20V
IRLB8721PBF
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695
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Infineon Technologies MOSFET N-CH 30V 62A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 65W (Tc) N-Channel - 30V 62A (Tc) 8.7 mOhm @ 31A, 10V 2.35V @ 25µA 13nC @ 4.5V 1077pF @ 15V 4.5V, 10V ±20V