Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PHP83N03LT,127
RFQ
VIEW
RFQ
2,660
In-stock
NXP USA Inc. MOSFET N-CH 25V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 115W (Tc) N-Channel 25V 75A (Tc) 9 mOhm @ 25A, 10V 2V @ 1mA 33nC @ 5V 1660pF @ 25V 5V, 10V ±15V
GP2M010A060H
RFQ
VIEW
RFQ
2,750
In-stock
Global Power Technologies Group MOSFET N-CH 600V 10A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 198W (Tc) N-Channel 600V 10A (Tc) 700 mOhm @ 5A, 10V 5V @ 250µA 35nC @ 10V 1660pF @ 25V 10V ±30V