Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPP80N06S2L-11
RFQ
VIEW
RFQ
3,562
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 158W (Tc) N-Channel - 55V 80A (Tc) 11 mOhm @ 40A, 10V 2V @ 93µA 80nC @ 10V 2650pF @ 25V 4.5V, 10V ±20V
STP16NK60Z
RFQ
VIEW
RFQ
1,501
In-stock
STMicroelectronics MOSFET N-CH 600V 14A TO-220 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 600V 14A (Tc) 420 mOhm @ 7A, 10V 4.5V @ 50µA 86nC @ 10V 2650pF @ 25V 10V ±30V
IXTP6N100D2
RFQ
VIEW
RFQ
1,002
In-stock
IXYS MOSFET N-CH 1000V 6A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel Depletion Mode 1000V 6A (Tc) 2.2 Ohm @ 3A, 0V - 95nC @ 5V 2650pF @ 25V - ±20V
IXTP60N10T
RFQ
VIEW
RFQ
667
In-stock
IXYS MOSFET N-CH 100V 60A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 176W (Tc) N-Channel - 100V 60A (Tc) 18 mOhm @ 25A, 10V 4.5V @ 50µA 49nC @ 10V 2650pF @ 25V 10V ±30V