- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
935
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
2,999
In-stock
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IXYS | MOSFET N-CH 85V 50A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 85V | 50A (Tc) | 23 mOhm @ 25A, 10V | 4V @ 25µA | 34nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
3,011
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
787
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V |