- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,593
In-stock
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STMicroelectronics | MOSFET N-CH 55V 90A TO220 | DeepGATE™, STripFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 55V | 90A (Tc) | 8 mOhm @ 45A, 10V | 4V @ 250µA | 90nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
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VIEW |
1,128
In-stock
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IXYS | MOSFET N-CH 65V 130A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 65V | 130A (Tc) | 6.6 mOhm @ 50A, 10V | 4V @ 250µA | 79nC @ 10V | 4800pF @ 25V | 10V | ±20V | |||
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VIEW |
2,500
In-stock
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Infineon Technologies | MOSFET N-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.8 mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | 10V | ±20V |