Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NP90N04MUG-S18-AY
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3,631
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Renesas Electronics America MOSFET N-CH 40V 90A TO-263 - Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220-3 1.8W (Ta), 217W (Tc) N-Channel - 40V 90A (Tc) 3 mOhm @ 45A, 10V 4V @ 250µA 182nC @ 10V 11200pF @ 25V 10V ±20V
STP80NF10
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3,413
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STMicroelectronics MOSFET N-CH 100V 80A TO-220 STripFET™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 100V 80A (Tc) 15 mOhm @ 40A, 10V 4V @ 250µA 182nC @ 10V 5500pF @ 25V 10V ±20V
IXTP270N04T4
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3,575
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IXYS MOSFET N-CH 40V 270A TrenchT4™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 40V 270A (Tc) 2.4 mOhm @ 50A, 10V 4V @ 250µA 182nC @ 10V 9140pF @ 25V 10V ±15V
IPP048N12N3GXKSA1
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3,354
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Infineon Technologies MOSFET N-CH 120V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 120V 100A (Tc) 4.8 mOhm @ 100A, 10V 4V @ 230µA 182nC @ 10V 12000pF @ 60V 10V ±20V