Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NP80N055MHE-S18-AY
RFQ
VIEW
RFQ
790
In-stock
Renesas Electronics America MOSFET N-CH 55V 80A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220-3 1.8W (Ta), 120W (Tc) N-Channel - 55V 80A (Tc) 11 mOhm @ 40A, 10V 4V @ 250µA 60nC @ 10V 3600pF @ 25V 10V ±20V
SPP77N06S2-12
RFQ
VIEW
RFQ
2,500
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 158W (Tc) N-Channel - 55V 80A (Tc) 12 mOhm @ 38A, 10V 4V @ 93µA 60nC @ 10V 2350pF @ 25V 10V ±20V
IPP80N04S3H4AKSA1
RFQ
VIEW
RFQ
1,009
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 115W (Tc) N-Channel - 40V 80A (Tc) 4.8 mOhm @ 80A, 10V 4V @ 65µA 60nC @ 10V 3900pF @ 25V 10V ±20V
IPP80N04S4L04AKSA1
RFQ
VIEW
RFQ
798
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO220-3-1 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 71W (Tc) N-Channel - 40V 80A (Tc) 4.3 mOhm @ 80A, 10V 2.2V @ 35µA 60nC @ 10V 4690pF @ 25V 4.5V, 10V +20V, -16V
IXTP80N10T
RFQ
VIEW
RFQ
2,631
In-stock
IXYS MOSFET N-CH 100V 80A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 25A, 10V 5V @ 100µA 60nC @ 10V 3040pF @ 25V 10V ±20V