Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK653R7-30C,127
RFQ
VIEW
RFQ
1,985
In-stock
NXP USA Inc. MOSFET N-CH 30V 100A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 158W (Tc) N-Channel - 30V 100A (Tc) 3.9 mOhm @ 25A, 10V 2.8V @ 1mA 78nC @ 10V 4707pF @ 25V 4.5V, 10V ±16V
IRF540A
RFQ
VIEW
RFQ
1,411
In-stock
ON Semiconductor MOSFET N-CH 100V 28A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 107W (Tc) N-Channel - 100V 28A (Tc) 52 mOhm @ 14A, 10V 4V @ 250µA 78nC @ 10V 1710pF @ 25V 10V -
IRFBE30
RFQ
VIEW
RFQ
2,635
In-stock
Vishay Siliconix MOSFET N-CH 800V 4.1A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IPP039N04LGHKSA1
RFQ
VIEW
RFQ
2,682
In-stock
Infineon Technologies MOSFET N-CH 40V TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 94W (Tc) N-Channel - 40V 80A (Tc) 3.9 mOhm @ 80A, 10V 2V @ 45µA 78nC @ 10V 6100pF @ 25V 4.5V, 10V ±20V