- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,806
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N CH 80V 10.5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 2.1W (Ta), 93.5W (Tc) | N-Channel | - | 80V | 10.5A (Ta), 46A (Tc) | 9.2 mOhm @ 20A, 10V | 3.4V @ 250µA | 38nC @ 10V | 1871pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
1,705
In-stock
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Texas Instruments | MOSFET N-CH 100V 100A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Ta) | 7.7 mOhm @ 60A, 10V | 3.3V @ 250µA | 38nC @ 10V | 3870pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,690
In-stock
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Infineon Technologies | MOSFET N-CH 60V 20A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 3W (Ta), 107W (Tc) | N-Channel | - | 60V | 20A (Ta), 80A (Tc) | 4 mOhm @ 80A, 10V | 2.8V @ 50µA | 38nC @ 10V | 2700pF @ 30V | 6V, 10V | ±20V |