- Series :
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- Operating Temperature :
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- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,765
In-stock
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ON Semiconductor | MOSFET N-CH 600V 7.4A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 142W (Tc) | N-Channel | - | 600V | 7.4A (Tc) | 1 Ohm @ 3.7A, 10V | 5V @ 250µA | 38nC @ 10V | 1430pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,694
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,181
In-stock
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IXYS | MOSFET N-CH 600V 22A TO220AB | HiPerFET™, Polar3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 500W (Tc) | N-Channel | - | 600V | 22A (Tc) | 360 mOhm @ 11A, 10V | 5V @ 1.5mA | 38nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
