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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF830	RFQ VIEW	PDF RFQ	3,170 In-stock	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	500V	4.5A (Tc)	1.5 Ohm @ 2.7A, 10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	10V	±20V
	IRF730	RFQ VIEW	PDF RFQ	762 In-stock	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220AB		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	400V	5.5A (Tc)	1 Ohm @ 3.3A, 10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	10V	±20V
	IRF634B-FP001	RFQ VIEW	PDF RFQ	1,783 In-stock	ON Semiconductor	MOSFET N-CH 250V 8.1A TO-220		-	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	250V	8.1A (Tc)	450 mOhm @ 4.05A, 10V	4V @ 250µA	38nC @ 10V	1000pF @ 25V	10V	±30V
	IRF830PBF	RFQ VIEW	PDF RFQ	1,659 In-stock	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	500V	4.5A (Tc)	1.5 Ohm @ 2.7A, 10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	10V	±20V
	IRF730PBF	RFQ VIEW	PDF RFQ	3,434 In-stock	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	400V	5.5A (Tc)	1 Ohm @ 3.3A, 10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	10V	±20V

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