Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPP03N60C3HKSA1
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3,843
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Infineon Technologies MOSFET N-CH 650V 3.2A TO-220AB CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 38W (Tc) N-Channel - 650V 3.2A (Tc) 1.4 Ohm @ 2A, 10V 3.9V @ 135µA 17nC @ 10V 400pF @ 25V 10V ±20V
STP11N65M5
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RFQ
1,228
In-stock
STMicroelectronics MOSFET N CH 650V 9A TO-220 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 85W (Tc) N-Channel - 650V 9A (Tc) 480 mOhm @ 4.5A, 10V 5V @ 250µA 17nC @ 10V 644pF @ 100V 10V ±25V
IPP65R074C6XKSA1
RFQ
VIEW
RFQ
945
In-stock
Infineon Technologies MOSFET N-CH 650V 57.7A TO220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 480.8W (Tc) N-Channel - 650V 57.7A (Tc) 74 mOhm @ 13.9A, 10V 3.5V @ 1.4mA 17nC @ 10V 3020pF @ 100V 10V ±20V
IXTP12N65X2
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RFQ
2,445
In-stock
IXYS MOSFET N-CH 650V 12A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 180W (Tc) N-Channel - 650V 12A (Tc) 300 mOhm @ 6A, 10V 5V @ 250µA 17nC @ 10V 1100pF @ 25V 10V ±30V
STP13N65M2
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RFQ
2,629
In-stock
STMicroelectronics MOSFET N-CH 650V 10A TO220 MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 650V 10A (Tc) 430 mOhm @ 5A, 10V 4V @ 250µA 17nC @ 10V 590pF @ 100V 10V ±25V