- Manufacture :
- Series :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,366
In-stock
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IXYS | MOSFET N-CH 150V 76A TO-220 | HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 350W (Tc) | N-Channel | - | 150V | 76A (Tc) | 20 mOhm @ 38A, 10V | 4.5V @ 250µA | 97nC @ 10V | 5800pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,658
In-stock
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Infineon Technologies | MOSFET P-CH 55V 74A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,925
In-stock
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Infineon Technologies | MOSFET P-CH 55V 74A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
