- Manufacture :
- Series :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,072
In-stock
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IXYS | MOSFET N-CH 650V 2A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 55W (Tc) | N-Channel | - | 650V | 2A (Tc) | 2.3 Ohm @ 1A, 10V | 5V @ 250µA | 4.3nC @ 10V | 180pF @ 25V | 10V | ±30V | |||
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VIEW |
1,872
In-stock
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ON Semiconductor | MOSFET N-CH 600V 2A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 54W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.7 Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | 10V | ±30V | |||
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VIEW |
3,099
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 800V 2A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 45W (Tc) | N-Channel | - | 800V | 2A (Tc) | 3.25 Ohm @ 1A, 10V | 5V @ 100µA | 2.63nC @ 10V | 102pF @ 100V | 10V | ±30V | |||
