- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,867
In-stock
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ON Semiconductor | MOSFET N-CH 200V 31A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 2V @ 250µA | 72nC @ 5V | 3900pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
792
In-stock
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Infineon Technologies | MOSFET N-CH 600V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,862
In-stock
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Infineon Technologies | MOSFET P-CH 55V 31A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,287
In-stock
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Infineon Technologies | MOSFET N-CH 600V 31A TO220-3 | CoolMOS™ P7 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 117W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,253
In-stock
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Infineon Technologies | MOSFET N-CH TO220-3 | CoolMOS™ CFD7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 156W (Tc) | N-Channel | - | 650V | 31A (Tc) | 70 mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | 2721pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,680
In-stock
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ON Semiconductor | MOSFET N-CH 200V 31A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 200V | 31A (Tc) | 75 mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | 3100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N-CH 650V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
790
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V |