Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLZ24NPBF
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661
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Infineon Technologies MOSFET N-CH 55V 18A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 55V 18A (Tc) 60 mOhm @ 11A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
IRLZ44NPBF
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2,116
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Infineon Technologies MOSFET N-CH 55V 47A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 110W (Tc) N-Channel - 55V 47A (Tc) 22 mOhm @ 25A, 10V 2V @ 250µA 48nC @ 5V 1700pF @ 25V 4V, 10V ±16V
IRLZ34NPBF
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RFQ
1,959
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Infineon Technologies MOSFET N-CH 55V 30A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 55V 30A (Tc) 35 mOhm @ 16A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V
IRL2505PBF
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RFQ
3,495
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Infineon Technologies MOSFET N-CH 55V 104A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 55V 104A (Tc) 8 mOhm @ 54A, 10V 2V @ 250µA 130nC @ 5V 5000pF @ 25V 4V, 10V ±16V
IRL3705NPBF
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RFQ
3,930
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Infineon Technologies MOSFET N-CH 55V 89A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V