Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK9509-55A,127
RFQ
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RFQ
3,514
In-stock
NXP USA Inc. MOSFET N-CH 55V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 211W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 25A, 10V 2V @ 1mA 60nC @ 5V 4633pF @ 25V 4.5V, 10V ±15V
IRL3705Z
RFQ
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RFQ
2,110
In-stock
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V
BUK9506-55B,127
RFQ
VIEW
RFQ
745
In-stock
NXP USA Inc. MOSFET N-CH 55V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 258W (Tc) N-Channel - 55V 75A (Tc) 5.4 mOhm @ 25A, 10V 2V @ 1mA 60nC @ 5V 7565pF @ 25V 4.5V, 10V ±15V
AUIRL3705Z
RFQ
VIEW
RFQ
1,625
In-stock
Infineon Technologies MOSFET N-CH 55V 86A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V
IRL3705ZPBF
RFQ
VIEW
RFQ
1,111
In-stock
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V