Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP64N055T
RFQ
VIEW
RFQ
1,708
In-stock
IXYS MOSFET N-CH 55V 64A TO-220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 130W (Tc) N-Channel - 55V 64A (Tc) 13 mOhm @ 500mA, 10V 4V @ 25µA 37nC @ 10V 1420pF @ 25V 10V ±20V
IXTP220N055T
RFQ
VIEW
RFQ
777
In-stock
IXYS MOSFET N-CH 55V 220A TO-220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 430W (Tc) N-Channel - 55V 220A (Tc) 4 mOhm @ 25A, 10V 4V @ 250µA 158nC @ 10V 7200pF @ 25V 10V ±20V
IXTP182N055T
RFQ
VIEW
RFQ
1,554
In-stock
IXYS MOSFET N-CH 55V 182A TO-220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 55V 182A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 114nC @ 10V 4850pF @ 25V 10V ±20V
IXTP110N055T
RFQ
VIEW
RFQ
657
In-stock
IXYS MOSFET N-CH 55V 110A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 55V 110A (Tc) 7 mOhm @ 25A, 10V 4V @ 100µA 67nC @ 10V 3080pF @ 25V 10V ±20V