Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NXP USA Inc. MOSFET N-CH 55V 17A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 55V 17A (Tc) 70 mOhm @ 10A, 10V 4V @ 1mA 19nC @ 10V 500pF @ 25V 10V ±20V
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ON Semiconductor MOSFET N-CH 55V 15A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 55V 15A (Tc) 90 mOhm @ 15A, 10V 4V @ 250µA 20nC @ 20V 250pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 55V 18A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 55V 18A (Tc) 60 mOhm @ 11A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
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Infineon Technologies MOSFET N-CH 55V 17A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 55V 17A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V
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Infineon Technologies MOSFET P-CH 55V 12A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) P-Channel - 55V 12A (Tc) 175 mOhm @ 7.2A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V