Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF820
RFQ
VIEW
RFQ
2,402
In-stock
STMicroelectronics MOSFET N-CH 500V 4A TO-220 PowerMESH™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel 500V 4A (Tc) 3 Ohm @ 1.5A, 10V 4V @ 250µA 17nC @ 10V 315pF @ 25V 10V ±30V
IPP50R520CPXKSA1
RFQ
VIEW
RFQ
2,420
In-stock
Infineon Technologies MOSFET N-CH 500V 7.1A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 66W (Tc) N-Channel 500V 7.1A (Tc) 520 mOhm @ 3.8A, 10V 3.5V @ 250µA 17nC @ 10V 680pF @ 100V 10V ±20V
IRF820A
RFQ
VIEW
RFQ
768
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4.5V @ 250µA 17nC @ 10V 340pF @ 25V 10V ±30V
STP10NM50N
RFQ
VIEW
RFQ
2,383
In-stock
STMicroelectronics MOSFET N-CH 500V 7A TO220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 70W (Tc) N-Channel 500V 7A (Tc) 630 mOhm @ 3.5A, 10V 4V @ 250µA 17nC @ 10V 450pF @ 50V 10V ±25V
IRF820APBF
RFQ
VIEW
RFQ
3,680
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.5A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel 500V 2.5A (Tc) 3 Ohm @ 1.5A, 10V 4.5V @ 250µA 17nC @ 10V 340pF @ 25V 10V ±30V