Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP28NM50N
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STMicroelectronics MOSFET N-CH 500V 21A TO-220 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 500V 21A (Tc) 158 mOhm @ 10.5A, 10V 4V @ 250µA 50nC @ 10V 1735pF @ 25V 10V ±25V
SPP21N50C3XKSA1
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Infineon Technologies MOSFET N-CH 500V 21A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 208W (Tc) N-Channel - 500V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 10V ±20V