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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTP02N50D	RFQ VIEW	PDF RFQ	1,615 In-stock	IXYS	MOSFET N-CH 500V 0.2A TO-220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	1.1W (Ta), 25W (Tc)	N-Channel	Depletion Mode	500V	200mA (Tc)	30 Ohm @ 50mA, 0V	5V @ 25µA	-	120pF @ 25V	10V	±20V
	IXTP6N50D2	RFQ VIEW	PDF RFQ	3,586 In-stock	IXYS	MOSFET N-CH 500V 6A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	N-Channel	Depletion Mode	500V	6A (Tc)	500 mOhm @ 3A, 0V	-	96nC @ 5V	2800pF @ 25V	-	±20V
	IXTP3N50D2	RFQ VIEW	PDF RFQ	1,778 In-stock	IXYS	MOSFET N-CH 500V 3A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	125W (Tc)	N-Channel	Depletion Mode	500V	3A (Tc)	1.5 Ohm @ 1.5A, 0V	-	40nC @ 5V	1070pF @ 25V	-	±20V
	IXTP1R6N50D2	RFQ VIEW	PDF RFQ	2,728 In-stock	IXYS	MOSFET N-CH 500V 1.6A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	Depletion Mode	500V	1.6A (Tc)	2.3 Ohm @ 800mA, 0V	-	23.7nC @ 5V	645pF @ 25V	-	±20V
	IXTP08N50D2	RFQ VIEW	PDF RFQ	2,458 In-stock	IXYS	MOSFET N-CH 500V 800MA TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	60W (Tc)	N-Channel	Depletion Mode	500V	800mA (Tc)	4.6 Ohm @ 400mA, 0V	-	12.7nC @ 5V	312pF @ 25V	-	±20V

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