Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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MTP2P50EG
RFQ
VIEW
RFQ
1,436
In-stock
ON Semiconductor MOSFET P-CH 500V 2A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel - 500V 2A (Tc) 6 Ohm @ 1A, 10V 4V @ 250µA 27nC @ 10V 1183pF @ 25V 10V ±20V
MTP2P50E
RFQ
VIEW
RFQ
1,504
In-stock
ON Semiconductor MOSFET P-CH 500V 2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel - 500V 2A (Tc) 6 Ohm @ 1A, 10V 4V @ 250µA 27nC @ 10V 1183pF @ 25V 10V ±20V
FQP1P50
RFQ
VIEW
RFQ
1,380
In-stock
ON Semiconductor MOSFET P-CH 500V 1.5A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 63W (Tc) P-Channel - 500V 1.5A (Tc) 10.5 Ohm @ 750mA, 10V 5V @ 250µA 14nC @ 10V 350pF @ 25V 10V ±30V
IXTP10P50P
RFQ
VIEW
RFQ
2,449
In-stock
IXYS MOSFET P-CH 500V 10A TO-220 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V
FQP3P50
RFQ
VIEW
RFQ
2,619
In-stock
ON Semiconductor MOSFET P-CH 500V 2.7A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 85W (Tc) P-Channel - 500V 2.7A (Tc) 4.9 Ohm @ 1.35A, 10V 5V @ 250µA 23nC @ 10V 660pF @ 25V 10V ±30V