Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP80NF12
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STMicroelectronics MOSFET N-CH 120V 80A TO-220 STripFET™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 120V 80A (Tc) 18 mOhm @ 40A, 10V 2V @ 250µA 189nC @ 10V 4300pF @ 25V 10V ±20V
IPP048N12N3GXKSA1
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3,354
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Infineon Technologies MOSFET N-CH 120V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 120V 100A (Tc) 4.8 mOhm @ 100A, 10V 4V @ 230µA 182nC @ 10V 12000pF @ 60V 10V ±20V
IPP041N12N3GXKSA1
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3,122
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Infineon Technologies MOSFET N-CH 120V 120A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 120V 120A (Tc) 4.1 mOhm @ 100A, 10V 4V @ 270µA 211nC @ 10V 13800pF @ 60V 10V ±20V