- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 70A, 10V (1)
- 11.4 mOhm @ 75A, 10V (1)
- 13.8 mOhm @ 16A, 10V (1)
- 14 mOhm @ 55A, 10V (1)
- 14.7 mOhm @ 56A, 10V (1)
- 18 mOhm @ 40A, 10V (1)
- 4.1 mOhm @ 100A, 10V (1)
- 4.4 mOhm @ 36A, 10V (1)
- 4.8 mOhm @ 100A, 10V (1)
- 6.7 mOhm @ 25A, 10V (1)
- 7 mOhm @ 28A, 10V (1)
- 7.6 mOhm @ 100A, 10V (1)
- 9.4 mOhm @ 21A, 10V (1)
- Applied Filters :
13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,388
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 88A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | N-Channel | 120V | 88A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | ||||
VIEW |
891
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 168W (Tc) | N-Channel | 120V | 56A (Ta) | 7 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V | ||||
VIEW |
2,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 255W (Tc) | N-Channel | 120V | 72A (Ta) | 4.4 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | 8100pF @ 60V | 10V | ±20V | ||||
VIEW |
3,142
In-stock
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Infineon Technologies | MOSFET N-CH 120V 56A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 107W (Tc) | N-Channel | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | ||||
VIEW |
1,601
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 60A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 98W (Tc) | N-Channel | 120V | 60A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | ||||
VIEW |
2,491
In-stock
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STMicroelectronics | MOSFET N-CH 120V 80A TO-220 | STripFET™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | N-Channel | 120V | 80A (Tc) | 18 mOhm @ 40A, 10V | 2V @ 250µA | 189nC @ 10V | 4300pF @ 25V | 10V | ±20V | ||||
VIEW |
3,250
In-stock
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IXYS | 120V/140A TRENCHT2 POWER MOSFET | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 577W (Tc) | N-Channel | 120V | 140A (Tc) | 10 mOhm @ 70A, 10V | 4.5V @ 250µA | 174nC @ 10V | 9700pF @ 25V | 10V | ±20V | ||||
VIEW |
1,752
In-stock
|
IXYS | 120V/110A TRENCHT2 POWER MOSFET | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 517W (Tc) | N-Channel | 120V | 110A (Tc) | 14 mOhm @ 55A, 10V | 4.5V @ 250µA | 120nC @ 10V | 6570pF @ 25V | 10V | ±20V | ||||
VIEW |
2,378
In-stock
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Infineon Technologies | MOSFET N-CH 120V 75A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 136W (Tc) | N-Channel | 120V | 75A (Tc) | 11.4 mOhm @ 75A, 10V | 4V @ 83µA | 65nC @ 10V | 4310pF @ 60V | 10V | ±20V | ||||
VIEW |
3,354
In-stock
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Infineon Technologies | MOSFET N-CH 120V 100A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | 120V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 230µA | 182nC @ 10V | 12000pF @ 60V | 10V | ±20V | ||||
VIEW |
3,122
In-stock
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Infineon Technologies | MOSFET N-CH 120V 120A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | 120V | 120A (Tc) | 4.1 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | ||||
VIEW |
1,253
In-stock
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Infineon Technologies | MOSFET N-CH 120V 100A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 188W (Tc) | N-Channel | 120V | 100A (Tc) | 7.6 mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | 6640pF @ 60V | 10V | ±20V | ||||
VIEW |
3,601
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 120V 70A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 405W (Tc) | N-Channel | 120V | 70A (Tc) | 6.7 mOhm @ 25A, 10V | 4V @ 1mA | 207.1nC @ 10V | 11384pF @ 60V | 10V | ±20V |