Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPP147N12N3GXKSA1
RFQ
VIEW
RFQ
3,142
In-stock
Infineon Technologies MOSFET N-CH 120V 56A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 107W (Tc) N-Channel - 120V 56A (Ta) 14.7 mOhm @ 56A, 10V 4V @ 61µA 49nC @ 10V 3220pF @ 60V 10V ±20V
IPP114N12N3GXKSA1
RFQ
VIEW
RFQ
2,378
In-stock
Infineon Technologies MOSFET N-CH 120V 75A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 136W (Tc) N-Channel - 120V 75A (Tc) 11.4 mOhm @ 75A, 10V 4V @ 83µA 65nC @ 10V 4310pF @ 60V 10V ±20V
IPP048N12N3GXKSA1
RFQ
VIEW
RFQ
3,354
In-stock
Infineon Technologies MOSFET N-CH 120V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 120V 100A (Tc) 4.8 mOhm @ 100A, 10V 4V @ 230µA 182nC @ 10V 12000pF @ 60V 10V ±20V
IPP041N12N3GXKSA1
RFQ
VIEW
RFQ
3,122
In-stock
Infineon Technologies MOSFET N-CH 120V 120A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 120V 120A (Tc) 4.1 mOhm @ 100A, 10V 4V @ 270µA 211nC @ 10V 13800pF @ 60V 10V ±20V
IPP076N12N3GXKSA1
RFQ
VIEW
RFQ
1,253
In-stock
Infineon Technologies MOSFET N-CH 120V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 188W (Tc) N-Channel - 120V 100A (Tc) 7.6 mOhm @ 100A, 10V 4V @ 130µA 101nC @ 10V 6640pF @ 60V 10V ±20V