Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP05N100
RFQ
VIEW
RFQ
3,636
In-stock
IXYS MOSFET N-CH 1000V 0.75A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 40W (Tc) N-Channel - 1000V 750mA (Tc) 17 Ohm @ 375mA, 10V 4.5V @ 250µA 7.8nC @ 10V 260pF @ 25V 10V ±30V
AOT5N100
RFQ
VIEW
RFQ
2,257
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 1000V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 195W (Tc) N-Channel - 1000V 4A (Tc) 4.2 Ohm @ 2.5A, 10V 4.5V @ 250µA 23nC @ 10V 1150pF @ 25V 10V ±30V
IXTP2N100
RFQ
VIEW
RFQ
3,380
In-stock
IXYS MOSFET N-CH 1000V 2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 2A (Tc) 7 Ohm @ 1A, 10V 4.5V @ 250µA 40nC @ 10V 825pF @ 25V 10V ±20V
AOT3N100
RFQ
VIEW
RFQ
733
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 1000V 2.8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 132W (Tc) N-Channel - 1000V 2.8A (Tc) 6 Ohm @ 1.5A, 10V 4.5V @ 250µA 20nC @ 10V 830pF @ 25V 10V ±30V
IXTP3N100P
RFQ
VIEW
RFQ
2,388
In-stock
IXYS MOSFET N-CH 1000V 3A TO-220 PolarVHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 1000V 3A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±20V