Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP08N100P
RFQ
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RFQ
753
In-stock
IXYS MOSFET N-CH 1000V 800MA TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 42W (Tc) N-Channel - 1000V 800mA (Tc) 20 Ohm @ 500mA, 10V 4V @ 50µA 11.3nC @ 10V 240pF @ 25V 10V ±20V
IXTP08N100D2
RFQ
VIEW
RFQ
3,547
In-stock
IXYS MOSFET N-CH 1000V 0.8A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel Depletion Mode 1000V 800mA (Tc) 21 Ohm @ 400mA, 0V - 14.6nC @ 5V 325pF @ 25V - ±20V