Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK7524-55A,127
RFQ
VIEW
RFQ
1,395
In-stock
NXP USA Inc. MOSFET N-CH 55V 47A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220AB 106W (Tc) N-Channel - 55V 47A (Tc) 24 mOhm @ 25A, 10V 4V @ 1mA - 1310pF @ 25V 10V ±20V
FQP4N60
RFQ
VIEW
RFQ
3,672
In-stock
ON Semiconductor MOSFET N-CH 600V 4.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 106W (Tc) N-Channel - 600V 4.4A (Tc) 2.2 Ohm @ 2.2A, 10V 5V @ 250µA 20nC @ 10V 670pF @ 25V 10V ±30V
FCP380N60
RFQ
VIEW
RFQ
3,126
In-stock
ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 106W (Tc) N-Channel - 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 40nC @ 10V 1665pF @ 25V 10V ±20V
FCP380N60E
RFQ
VIEW
RFQ
939
In-stock
ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 106W (Tc) N-Channel - 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V 10V ±20V