Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP42N15T
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RFQ
1,162
In-stock
IXYS MOSFET N-CH 150V 42A TO-220 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 150V 42A (Tc) 45 mOhm @ 500mA, 10V 4.5V @ 250µA 21nC @ 10V 1880pF @ 25V 10V ±30V
IXTP32N20T
RFQ
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RFQ
1,906
In-stock
IXYS MOSFET N-CH 200V 32A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 200V 32A (Tc) 72 mOhm @ 16A, 10V 4.5V @ 250µA 38nC @ 10V 1760pF @ 25V 10V ±20V
STP140N8F7
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RFQ
1,445
In-stock
STMicroelectronics MOSFET N-CH 80V 90A TO-220 DeepGATE™, STripFET™ VII Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 200W (Tc) N-Channel - 80V 90A (Tc) 4.3 mOhm @ 45A, 10V 4.5V @ 250µA 96nC @ 10V 6340pF @ 40V 10V ±20V
STP110N8F6
RFQ
VIEW
RFQ
728
In-stock
STMicroelectronics MOSFET N-CH 80V 110A TO-220 STripFET™ F6 Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 200W (Tc) N-Channel - 80V 110A (Tc) 6.5 mOhm @ 55A, 10V 4.5V @ 250µA 150nC @ 10V 9130pF @ 40V 10V ±20V