Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF830
RFQ
VIEW
RFQ
1,257
In-stock
STMicroelectronics MOSFET N-CH 500V 4.5A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 500V 4.5A (Tc) 1.5 Ohm @ 2.7A, 10V 4V @ 250µA 30nC @ 10V 610pF @ 25V 10V ±20V
STP12NM50N
RFQ
VIEW
RFQ
3,610
In-stock
STMicroelectronics MOSFET N-CH 500V 11A TO-220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 500V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 940pF @ 50V 10V ±25V
IXTP6N50P
RFQ
VIEW
RFQ
1,337
In-stock
IXYS MOSFET N-CH 500V 6A TO-220 PolarHV™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 500V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 50µA 14.6nC @ 10V 740pF @ 25V 10V ±30V
STP13NM50N
RFQ
VIEW
RFQ
2,260
In-stock
STMicroelectronics MOSFET N-CH 500V 12A TO-220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V 960pF @ 50V 10V ±25V
IXTP1R6N50D2
RFQ
VIEW
RFQ
2,728
In-stock
IXYS MOSFET N-CH 500V 1.6A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel Depletion Mode 500V 1.6A (Tc) 2.3 Ohm @ 800mA, 0V - 23.7nC @ 5V 645pF @ 25V - ±20V