Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK1119(F)
RFQ
VIEW
RFQ
2,164
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 1000V 4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 4A (Ta) 3.8 Ohm @ 2A, 10V 3.5V @ 1mA 60nC @ 10V 700pF @ 25V 10V ±20V
STP3NB100
RFQ
VIEW
RFQ
3,951
In-stock
STMicroelectronics MOSFET N-CH 1KV 3A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 3A (Tc) 6 Ohm @ 1.5A, 10V 4V @ 250µA 30nC @ 10V 700pF @ 25V 10V ±30V
IXTP1R6N100D2
RFQ
VIEW
RFQ
808
In-stock
IXYS MOSFET N-CH 1000V 1.6A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel Depletion Mode 1000V 1.6A (Tc) 10 Ohm @ 800mA, 0V - 27nC @ 5V 645pF @ 25V 10V ±20V
IXTP2N100
RFQ
VIEW
RFQ
3,380
In-stock
IXYS MOSFET N-CH 1000V 2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 2A (Tc) 7 Ohm @ 1A, 10V 4.5V @ 250µA 40nC @ 10V 825pF @ 25V 10V ±20V