- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,388
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 88A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | N-Channel | - | 120V | 88A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | |||
|
VIEW |
2,219
In-stock
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Infineon Technologies | MOSFET N-CH 40V 75A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | N-Channel | - | 40V | 75A (Tc) | 5.5 mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,177
In-stock
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STMicroelectronics | MOSFET N-CH 30V 80A TO220 | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | N-Channel | - | 30V | 80A (Tc) | 3.5 mOhm @ 40A, 10V | 2.5V @ 250µA | 42nC @ 4.5V | 3100pF @ 25V | 4.5V, 10V | ±20V | |||
