Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK25E06K3,S1X(S
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2,908
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A TO-220AB U-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 60W (Tc) N-Channel - 60V 25A (Ta) 18 mOhm @ 12.5A, 10V - 29nC @ 10V - - -
STP9NM40N
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RFQ
1,483
In-stock
STMicroelectronics MOSFET N-CH 400V 5.6A TO220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) N-Channel - 400V 5.6A (Tc) 790 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 365pF @ 50V 10V ±25V
STP9N60M2
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RFQ
1,012
In-stock
STMicroelectronics MOSFET N-CH 600V 5.5A TO-220 MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) N-Channel - 600V 5.5A (Tc) 780 mOhm @ 3A, 10V 4V @ 250µA 10nC @ 10V 320pF @ 100V 10V ±25V
STP9N65M2
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RFQ
2,863
In-stock
STMicroelectronics MOSFET N-CH 650V 5A TO-220AB MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) N-Channel - 650V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 10nC @ 10V 315pF @ 100V 10V ±25V