Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CH 60V 50A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220AB 190W (Tc) N-Channel - 60V 50A (Tc) 18 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V 10V ±20V
IRFB7545PBF
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Infineon Technologies MOSFET N CH 60V 95A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220 125W (Tc) N-Channel - 60V 95A (Tc) 5.9 mOhm @ 57A, 10V 3.7V @ 100µA 110nC @ 10V 4010pF @ 25V 6V, 10V ±20V
IRFZ48VPBF
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Infineon Technologies MOSFET N-CH 60V 72A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220AB 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V
IRFZ48PBF
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Vishay Siliconix MOSFET N-CH 60V 50A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220AB 190W (Tc) N-Channel - 60V 50A (Tc) 18 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V 10V ±20V
FQP47P06
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ON Semiconductor MOSFET P-CH 60V 47A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 160W (Tc) P-Channel - 60V 47A (Tc) 26 mOhm @ 23.5A, 10V 4V @ 250µA 110nC @ 10V 3600pF @ 25V 10V ±25V