- Series :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,916
In-stock
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STMicroelectronics | MOSFET N-CH 800V 6A TO220 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | 10V | ±30V | ||||
VIEW |
1,167
In-stock
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STMicroelectronics | N-CHANNEL 900 V, 2.1 OHM TYP., 3 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 900V | 6A (Tc) | 1.1 Ohm @ 3A, 10V | 5V @ 100µA | - | - | 10V | ±30V | ||||
VIEW |
2,343
In-stock
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STMicroelectronics | MOSFET N-CH 1050V 6A TO-220AB | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 1050V | 6A (Tc) | 1.3 Ohm @ 3A, 10V | 5V @ 100µA | 21.5nC @ 10V | 545pF @ 100V | 10V | 30V | ||||
VIEW |
1,227
In-stock
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STMicroelectronics | MOSFET N CH 800V 6A TO220 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 5V @ 100µA | 16.5nC @ 10V | 450pF @ 100V | 10V | ±30V |