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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFB23N20D	RFQ VIEW	PDF RFQ	612 In-stock	Infineon Technologies	MOSFET N-CH 200V 24A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	3.8W (Ta), 170W (Tc)	N-Channel	-	200V	24A (Tc)	100 mOhm @ 14A, 10V	5.5V @ 250µA	86nC @ 10V	1960pF @ 25V	10V	±30V
	IRL5602	RFQ VIEW	PDF RFQ	2,404 In-stock	Infineon Technologies	MOSFET P-CH 20V 24A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3	TO-220AB	-	P-Channel	-	20V	24A (Tc)	42 mOhm @ 12A, 4.5V	1V @ 250µA	44nC @ 4.5V	1460pF @ 15V	2.5V, 4.5V	±8V
	IRL2703PBF	RFQ VIEW	PDF RFQ	3,198 In-stock	Infineon Technologies	MOSFET N-CH 30V 24A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	45W (Tc)	N-Channel	-	30V	24A (Tc)	40 mOhm @ 14A, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	4.5V, 10V	±16V
	IRFB23N20DPBF	RFQ VIEW	PDF RFQ	3,885 In-stock	Infineon Technologies	MOSFET N-CH 200V 24A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	3.8W (Ta), 170W (Tc)	N-Channel	-	200V	24A (Tc)	100 mOhm @ 14A, 10V	5.5V @ 250µA	86nC @ 10V	1960pF @ 25V	10V	±30V

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