- Part Status :
- Power Dissipation (Max) :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,008
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 100A TO220-3 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 1.75W (Ta), 75W (Tc) | N-Channel | - | 60V | 100A (Ta) | 7.2 mOhm @ 50A, 10V | - | 135nC @ 10V | 6900pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
3,072
In-stock
|
Renesas Electronics America | MOSFET N-CH 40V 100A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.5W (Ta), 119W (Tc) | N-Channel | - | 40V | 100A (Ta) | 3.7 mOhm @ 50A, 10V | - | 100nC @ 10V | 5550pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,227
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 100V | 100A (Ta) | 3.4 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,794
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 100A TO220-3 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 1.75W (Ta), 90W (Tc) | N-Channel | - | 60V | 100A (Ta) | 5 mOhm @ 50A, 10V | - | 220nC @ 10V | 12500pF @ 20V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,962
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 80V | 100A (Ta) | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | 10V | ±20V | |||
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|
VIEW |
1,498
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 60V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 10V | ±20V | |||
