Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPP80N06S2L05AKSA1
RFQ
VIEW
RFQ
1,668
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 55V 80A (Tc) 4.8 mOhm @ 80A, 10V 2V @ 250µA 230nC @ 10V 5700pF @ 25V 10V ±20V
IPP80P03P4L07AKSA1
RFQ
VIEW
RFQ
1,473
In-stock
Infineon Technologies MOSFET P-CH 30V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 88W (Tc) P-Channel - 30V 80A (Tc) 7.2 mOhm @ 80A, 10V 2V @ 130µA 80nC @ 10V 5700pF @ 25V 4.5V, 10V +5V, -16V