Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQP4P25
RFQ
VIEW
RFQ
3,772
In-stock
ON Semiconductor MOSFET P-CH 250V 4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 75W (Tc) P-Channel 250V 4A (Tc) 2.1 Ohm @ 2A, 10V 5V @ 250µA 14nC @ 10V 420pF @ 25V 10V ±30V
IRF624PBF
RFQ
VIEW
RFQ
1,474
In-stock
Vishay Siliconix MOSFET N-CH 250V 4.4A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel 250V 4.4A (Tc) 1.1 Ohm @ 2.6A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRF624
RFQ
VIEW
RFQ
1,672
In-stock
Vishay Siliconix MOSFET N-CH 250V 4.4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel 250V 4.4A (Tc) 1.1 Ohm @ 2.6A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V