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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFB7430GPBF	RFQ VIEW	PDF RFQ	2,391 In-stock	Infineon Technologies	MOSFET N CH 40V 195A TO220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-220-3	TO-220AB	-	N-Channel	-	40V	195A (Tc)	1.3 mOhm @ 100A, 10V	3.9V @ 250µA	460nC @ 10V	14240pF @ 25V	6V, 10V	±20V
	AUIRFB8409	RFQ VIEW	PDF RFQ	3,295 In-stock	Infineon Technologies	MOSFET N-CH 40V 195A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	375W (Tc)	N-Channel	-	40V	195A (Tc)	1.3 mOhm @ 100A, 10V	3.9V @ 250µA	450nC @ 10V	14240pF @ 25V	10V	±20V
	IRFB7430PBF	RFQ VIEW	PDF RFQ	2,543 In-stock	Infineon Technologies	MOSFET N CH 40V 195A TO220		HEXFET®, StrongIRFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	375W (Tc)	N-Channel	-	40V	195A (Tc)	1.3 mOhm @ 100A, 10V	3.9V @ 250µA	460nC @ 10V	14240pF @ 25V	6V, 10V	±20V
	IRFB7434PBF	RFQ VIEW	PDF RFQ	1,927 In-stock	Infineon Technologies	MOSFET N CH 40V 195A TO220		HEXFET®, StrongIRFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	294W (Tc)	N-Channel	-	40V	195A (Tc)	1.6 mOhm @ 100A, 10V	3.9V @ 250µA	324nC @ 10V	10820pF @ 25V	6V, 10V	±20V

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