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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	BUK754R3-75C,127	RFQ VIEW	PDF RFQ	1,445 In-stock	NXP USA Inc.	MOSFET N-CH 75V 100A TO220AB-3		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	333W (Tc)	N-Channel	-	75V	100A (Tc)	4.3 mOhm @ 25A, 10V	4V @ 1mA	142nC @ 10V	11659pF @ 25V	10V	±20V
	BUK752R3-40C,127	RFQ VIEW	PDF RFQ	1,710 In-stock	NXP USA Inc.	MOSFET N-CH 40V 100A TO220AB		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	333W (Tc)	N-Channel	-	40V	100A (Tc)	2.3 mOhm @ 25A, 10V	4V @ 1mA	175nC @ 10V	11323pF @ 25V	10V	±20V
	AUIRF1404	RFQ VIEW	PDF RFQ	3,486 In-stock	Infineon Technologies	MOSFET N-CH 40V 202A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	333W (Tc)	N-Channel	-	40V	160A (Tc)	4 mOhm @ 121A, 10V	4V @ 250µA	196nC @ 10V	5669pF @ 25V	10V	±20V
	IRF1404PBF	RFQ VIEW	PDF RFQ	1,246 In-stock	Infineon Technologies	MOSFET N-CH 40V 202A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	333W (Tc)	N-Channel	-	40V	202A (Tc)	4 mOhm @ 121A, 10V	4V @ 250µA	196nC @ 10V	5669pF @ 25V	10V	±20V

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