- Series :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,931
In-stock
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Infineon Technologies | MOSFET N-CH 650V 9A TO220-3 | CoolMOS™ P7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 41W (Tc) | N-Channel | - | 650V | 9A (Tc) | 360 mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | 555pF @ 400V | 10V | ±20V | ||||
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1,141
In-stock
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Infineon Technologies | MOSFET N-CH TO220-3 | CoolMOS™ CFD7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 52W (Tc) | N-Channel | - | 650V | 9A (Tc) | 280 mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18nC @ 10V | 807pF @ 400V | 10V | ±20V |