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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,919
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 12A H2PAK-2 | MDmesh™ K5 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 250W (Tc) | N-Channel | 1200V | 12A (Tc) | 690 mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | 10V | ±30V | |||
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VIEW |
3,647
In-stock
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IXYS | MOSFET N-CH 1200V 3A TO-263 | HiPerFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 200W (Tc) | N-Channel | 1200V | 3A (Tc) | 4.5 Ohm @ 1.5A, 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V | |||
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VIEW |
837
In-stock
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IXYS | MOSFET N-CH 1200V 3A TO-263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 200W (Tc) | N-Channel | 1200V | 3A (Tc) | 4.5 Ohm @ 1.5A, 10V | 5V @ 250µA | 42nC @ 10V | 1350pF @ 25V | 10V | ±20V | |||
