- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,977
In-stock
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Infineon Technologies | MOSFET N-CH 600V 6.8A TO-263 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 66W (Tc) | N-Channel | - | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | 10V | ±20V | ||||
VIEW |
3,697
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 18A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 150.6W (Tc) | N-Channel | - | 600V | 18A (Tc) | 190 mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | 10V | ±30V | ||||
VIEW |
691
In-stock
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ON Semiconductor | MOSFET N-CH 800V 5.8A D2PAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 158W (Tc) | N-Channel | - | 800V | 5.8A (Tc) | 1.95 Ohm @ 2.9A, 10V | 5V @ 250µA | 31nC @ 10V | 1500pF @ 25V | 10V | ±30V |