- Manufacture :
- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,474
In-stock
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Infineon Technologies | MOSFET N-CH 30V 80A TO-263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 94W (Tc) | N-Channel | - | 30V | 80A (Tc) | 3.4 mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,391
In-stock
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ON Semiconductor | MOSFET N-CH 100V 33A D2PAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 127W (Tc) | N-Channel | - | 100V | 33A (Tc) | 52 mOhm @ 16.5A, 10V | 4V @ 250µA | 51nC @ 10V | 1500pF @ 25V | 10V | ±25V | ||||
VIEW |
3,601
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 129W (Tc) | N-Channel | - | 650V | 37A (Tc) | 80 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | 2180pF @ 400V | 10V | ±20V |