- Part Status :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,316
In-stock
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Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
612
In-stock
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Infineon Technologies | MOSFET N-CH 75V 76A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 75V | 76A (Tc) | 8.4 mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,002
In-stock
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Infineon Technologies | MOSFET N-CH 100V 80A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 100V | 80A (Tc) | 8.3 mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | 3980pF @ 50V | 6V, 10V | ±20V | |||
