Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7820PBF
RFQ
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RFQ
1,580
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Infineon Technologies MOSFET N CH 200V 3.7A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 78 mOhm @ 2.2A, 10V 5V @ 100µA 44nC @ 10V 1750pF @ 100V 10V ±20V
IRF7464PBF
RFQ
VIEW
RFQ
1,787
In-stock
Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V
IRF7492PBF
RFQ
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RFQ
2,478
In-stock
Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRF7492
RFQ
VIEW
RFQ
1,674
In-stock
Infineon Technologies MOSFET N-CH 200V 3.7A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3.7A (Ta) 79 mOhm @ 2.2A, 10V 2.5V @ 250µA 59nC @ 10V 1820pF @ 25V 10V ±20V
IRF7464
RFQ
VIEW
RFQ
3,812
In-stock
Infineon Technologies MOSFET N-CH 200V 1.2A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±30V
IRF7450
RFQ
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RFQ
3,607
In-stock
Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V
IRF7450PBF
RFQ
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RFQ
2,543
In-stock
Infineon Technologies MOSFET N-CH 200V 2.5A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 2.5A (Ta) 170 mOhm @ 1.5A, 10V 5.5V @ 250µA 39nC @ 10V 940pF @ 25V 10V ±30V