- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,493
In-stock
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Infineon Technologies | MOSFET N-CH 80V 10A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 80V | 10A (Ta) | 13.4 mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | 10V | ±20V | |||
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VIEW |
765
In-stock
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Infineon Technologies | MOSFET N-CH 80V 6.3A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 80V | 6.3A (Ta) | 29 mOhm @ 3.8A, 10V | 4V @ 250µA | 57nC @ 10V | 1680pF @ 25V | 10V | ±20V | |||
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VIEW |
1,884
In-stock
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Infineon Technologies | MOSFET N-CH 80V 9.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Tc) | N-Channel | - | 80V | 9.3A (Tc) | 15 mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | 10V | ±20V | |||
